ELECTRONIC-STRUCTURE OF GE/SI MONOLAYER STRAINED-LAYER SUPERLATTICES

被引：97

作者：

PEARSALL, TP ^{[1
]}

BEVK, J ^{[1
]}

BEAN, JC ^{[1
]}

BONAR, J ^{[1
]}

MANNAERTS, JP ^{[1
]}

OURMAZD, A ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.39.3741

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3741 / 3757

页数：17

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