Design and Implementation of a High-Performance W-Band Up-Conversion Mixer in 90 nm CMOS

被引：0

作者：

Lin, Yo-Sheng ^{[1
]}

Liu, Run-Chi ^{[1
]}

Wang, Chien-Chin ^{[1
]}

机构：

[1] Natl Chi Nan Univ, Dept Elect Engn, Puli, Taiwan

来源：

SMART SCIENCE | 2015年 / 3卷 / 03期

关键词：

CMOS; 79GHz; Up-conversion mixer; Conversion gain; Isolation; Negative resistance compensation;

D O I：

10.1080/23080477.2015.11665649

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A 79 GHz mixer with Dual Negative-Resistance Compensation for direct up-conversion using standard 90nm CMOS technology is reported. The mixer comprises an enhanced double-balanced Gilbert cell with current injection for power consumption reduction, and dual negative resistance compensation for conversion gain (CG) enhancement. A Marchand balun is used for conversion of the single LO input signal to a differential signal, and another Marchand balun is used to convert the differential RF output to a single signal. The mixer consumes 26.52mW and has an LO-port return loss (S-22) of -11.12 similar to-11.34dB for frequencies of 75 similar to 81GHz, RF-port return loss (S33) of -11.44 similar to-12.98dB for frequencies of 70 similar to 90GHz. At an IF of 0.1GHz and an RF of 79GHz, the mixer achieves a CG of 3.7dB and LO-RF isolation of 37.75dB.

引用

收藏

页码：142 / 147

页数：6

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