CONDUCTION AND TRAPPING OF ELECTRONS IN HIGHLY STRESSED ULTRATHIN FILMS OF THERMAL SIO2

被引：96
作者：
HARARI, E [1 ]
机构：
[1] HUGHES AIRCRAFT CO,NEWPORT BEACH RES CTR,NEWPORT BEACH,CA 92663
来源：
APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 11期
关键词：
D O I：
10.1063/1.89252
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：601 / 603
页数：3
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