CONDUCTION AND TRAPPING OF ELECTRONS IN HIGHLY STRESSED ULTRATHIN FILMS OF THERMAL SIO2

[1] CAPTURE AND EMISSION OF ELECTRONS AT 2.4-EV-DEEP TRAP LEVEL IN SIO2-FILMS [J]. PHYSICAL REVIEW B, 1975, 11 (12): : 5023 - 5030

[2] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[3] HARARI E, 1976, IEEE ANNUAL INTERFAC

[4] THEORY OF HIGH FIELD CONDUCTION IN A DIELECTRIC [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 3887 - &

[5] SOLOMON P, 1976, J APPL PHYS, V47, P1023, DOI 10.1063/1.322739

[6] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1965, 140 (2A): : A569 - &

[1] CAPTURE AND EMISSION OF ELECTRONS AT 2.4-EV-DEEP TRAP LEVEL IN SIO2-FILMS [J]. PHYSICAL REVIEW B, 1975, 11 (12): : 5023 - 5030

[2] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[3] HARARI E, 1976, IEEE ANNUAL INTERFAC

[4] THEORY OF HIGH FIELD CONDUCTION IN A DIELECTRIC [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 3887 - &

[5] SOLOMON P, 1976, J APPL PHYS, V47, P1023, DOI 10.1063/1.322739

[6] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1965, 140 (2A): : A569 - &