共 33 条
[4]
QUANTITATIVE MODEL OF REACTIVE METAL-SEMICONDUCTOR INTERFACE GROWTH USING HIGH-RESOLUTION PHOTOEMISSION RESULTS
[J].
PHYSICAL REVIEW B,
1986, 33 (08)
:5435-5449
[5]
CLUSTER FORMATION AND ATOMIC INTERMIXING AT THE REACTIVE V/GE(111) INTERFACE
[J].
PHYSICAL REVIEW B,
1985, 32 (08)
:5149-5155
[6]
DELGIUDICE M, IN PRESS PHYS REV B
[7]
EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[8]
RARE-EARTH-METAL SEMICONDUCTOR INTERFACIAL REACTIONS - THERMODYNAMIC ASPECTS
[J].
PHYSICAL REVIEW B,
1986, 33 (02)
:726-735
[9]
ADATOM AGGREGATION, REACTION, AND CHEMICAL TRAPPING AT THE SM/GAAS(110) INTERFACE
[J].
PHYSICAL REVIEW B,
1985, 32 (02)
:962-968
[10]
REACTION AT A REFRACTORY-METAL SEMICONDUCTOR INTERFACE - V/GAAS(110)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1985, 3 (03)
:918-921