A STUDY OF THE INITIAL OXIDATION OF POLYCRYSTALLINE SI USING SURFACE-ANALYSIS TECHNIQUES

被引:18
作者
KAZMERSKI, LL
JAMJOUM, O
IRELAND, PJ
WHITNEY, RL
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期
关键词
D O I
10.1116/1.570964
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:960 / 964
页数:5
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共 35 条
  • [1] SI-SIO2 INTERFACE EXAMINED BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY
    BLANC, J
    BUIOCCHI, CJ
    ABRAHAMS, MS
    HAM, WE
    [J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 120 - 122
  • [2] BRIGGS D, 1978, HDB XRAY PHOTOELECTR, P163
  • [3] BURLEIGH TD, 1979, SOLAR CELLS, V1, P272
  • [4] CARLEY AF, 1978, J ELECTRON SPECTROSC, V13, P341
  • [5] DIRECTIONALLY SOLIDIFIED SOLAR-GRADE SILICON USING CARBON CRUCIBLES
    CISZEK, TF
    SCHWUTTKE, GH
    YANG, KH
    [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (04) : 527 - 533
  • [6] ESCA STUDY OF OXIDE AT SI-SIO2 INTERFACE
    CLARKE, RA
    TAPPING, RL
    HOPPER, MA
    YOUNG, L
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1347 - 1350
  • [7] del Valle J. L., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P202
  • [8] FIELD-DEPENDENT INTERNAL PHOTOEMISSION PROBE OF ELECTRONIC-STRUCTURE OF SI-SIO2 INTERFACE
    DISTEFANO, TH
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 856 - 859
  • [9] USE OF THIN SI CRYSTALS IN BACKSCATTERING-CHANNELING STUDIES OF SI-SIO2 INTERFACE
    FELDMAN, LC
    SILVERMAN, PJ
    WILLIAMS, JS
    JACKMAN, TE
    STENSGAARD, I
    [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (20) : 1396 - 1399
  • [10] Green M. A., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P684