SURFACE PHOTOVOLTAGE AND INTERNAL PHOTOEMISSION AT ANODIZED INSB SURFACE

被引：57
作者：
LILE, DL [1 ]
机构：
[1] USN,ELECTR LAB CTR,SAN DIEGO,CA 92152
来源：
SURFACE SCIENCE | 1973年 / 34卷 / 02期
关键词：
D O I：
10.1016/0039-6028(73)90122-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：337 / 367
页数：31
相关论文
共 43 条
[1]   NEW PHOTOVOLTAIC RESPONSE IN SURFACE OF N-TYPE INSB [J].
AXT, CJ ;
ROGERS, CG .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3423-+
[2]   MICROZONE RECRYSTALLIZATION OF SEMICONDUCTOR COMPOUND FILMS [J].
BILLINGS, AR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :757-&
[3]   COMBINED MEASUREMENTS OF FIELD EFFECT, SURFACE PHOTO-VOLTAGE AND PHOTOCONDUCTIVITY [J].
BRATTAIN, WH ;
GARRETT, CGB .
BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (05) :1019-1040
[4]  
BRATTAIN WH, 1953, AT&T TECH J, V32, P1
[5]   PHOTO-VOLTAGE INDUCED BY CAPTURE OF PHOTO-CARRIERS BY SURFACE TRAPS [J].
BUIMISTR.VM ;
GORBAN, AP ;
LITOVCHE.VG .
SURFACE SCIENCE, 1965, 3 (05) :445-&
[6]  
BUJATTI M, 1965, P IEEE, V53, P395
[7]   SURFACE INVERSION AND ACCUMULATION OF ANODIZED INSB (MOS CAPACITANCE 77 DEGREES K OXIDATION AU DEPOSITION DEVICE FABRICATION E/T) [J].
CHANG, LL ;
HOWARD, WE .
APPLIED PHYSICS LETTERS, 1965, 7 (08) :210-&
[8]   SURFACE STATES ON THE (III) SURFACE OF INDIUM ANTIMONIDE [J].
DAVIS, JL .
SURFACE SCIENCE, 1964, 2 :33-39
[9]   BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J].
DEAL, BE ;
SNOW, EH ;
MEAD, CA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) :1873-&
[10]   DETERMINATION OF SEMICONDUCTOR SURFACE PROPERTIES BY MEANS OF PHOTOELECTRIC EMISSION [J].
FISCHER, TE .
SURFACE SCIENCE, 1969, 13 (01) :30-&
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