A1 REDISTRIBUTION IN THERMALLY OXIDIZED SI SURFACE

被引:6
作者
EDAGAWA, H
MORITA, Y
INUISHI, Y
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关键词
D O I
10.1143/JPSJ.18.460
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:460 / &
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[1]   IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J].
ATALLA, MM ;
TANNENBAUM, E .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04) :933-946
[2]   N TYPE CONVERSION OF THERMALLY OXIDIZED SI SURFACE [J].
EDAGAWA, H ;
MAEKAWA, S ;
MORITA, Y ;
INUISHI, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (07) :1190-&
[3]   1-F NOISE AND CHANNEL IN GE-PN JUNCTION [J].
KOMATSUBARA, K ;
INUISHI, Y ;
EDAGAWA, H ;
SHIBAIKE, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (09) :1713-1714