Improved Memory Characteristics by NH3 Post Annealing for ZrO2 Based Charge Trapping Nonvolatile Memory

被引：7
作者：
Tang, Zhenjie [1 ]
Zhao, Dongqiu [1 ]
Li, Rong [2 ]
Zhu, Xinhua [3 ]
机构：
[1] Anyang Normal Univ, Coll Phys & Elect Engn, Anyang 455000, Peoples R China
[2] Anyang Normal Univ, Sch Math & Stat, Anyang 455000, Peoples R China
[3] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
来源：
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2014年 / 15卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Charge trapping; NH3; annealing; Memory capacitors;
D O I：
10.4313/TEEM.2014.15.1.16
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Charge trapping nonvolatile memory capacitors with ZrO2 as charge trapping layer were fabricated, and the effects of post annealing atmosphere (NH3 and N-2) on their memory storage characteristics were investigated. It was found that the memory windows were improved, after annealing treatment. The memory capacitor after NH3 annealing treatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss similar to 22.3% up to ten years, even at 150., and excellent endurance (1.5% memory window degradation). The results are attributed to deep level bulk charge traps, induced by using NH3 annealing.
引用
收藏
页码：16 / 19
页数：4
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