ANISOTROPY OF INTERFACIAL SEGREGATION - GRAIN-BOUNDARIES AND FREE SURFACES

被引：0

作者：

LEJCEK, P ^{[1
]}

KRAJNIKOV, AV ^{[1
]}

IVASHCHENKO, YN ^{[1
]}

ADAMEK, J ^{[1
]}

机构：

[1] ACAD SCI UKSSR, INST PROBLEMS MAT SCI, KIEV 252180, UKRAINE, USSR

来源：

SURFACE SCIENCE | 1992年 / 269卷

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Solute segregation was measured at both the {013} grain boundary and the (013) free surface of the same sample of an Fe-6at%Si alloy containing traces of P and S at 873 K. Large phosphorus enrichment and silicon depletion characterize the grain boundary segregation whereas no sulfur was detected there. On the other hand, pronounced sulfur segregation was observed at the surface accompanied by weak enrichments of phosphorus and silicon. Qualitative differences between both types of segregation behavior are considered as a generalized anisotropy of interfacial segregation.

引用

页码：1147 / 1151

页数：5

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