PHASE-AMPLITUDE COUPLING FACTOR OF SINGLE-MODE GAIN-SWITCHED INGAASP LASER-DIODES

被引：7

作者：

BOUCHOULE, S ^{[1
]}

STELMAKH, N ^{[1
]}

LOURTIOZ, JM ^{[1
]}

CAVELIER, M ^{[1
]}

KAZMIERSKI, C ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,BAGNEUX LAB,F-92220 BAGNEUX,FRANCE

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 09期

关键词：

D O I：

10.1109/68.157121

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The phase amplitude coupling factor (alpha-factor) of gain-switched InGaAsP laser diodes is deduced from chirp measurements. A tunable laser scheme allows us to obtain the wavelength dependence of alpha over approximately 40 nm. The alpha-values are found to be higher than those deduced from spontaneous emission spectra below threshold. We show that the difference is explained by the dependence of alpha with carrier density. Time-resolved measurements of spontaneous emission during pulse build-up reveal that the carrier density at maximum can be 1.5 times higher than the threshold carrier density. Experimental evolutions of alpha are well reproduced by calculations.

引用

页码：979 / 982

页数：4

共 16 条

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