ELECTRON MOBILITY IN GE, SI, AND GAP

被引：91
作者：
RODE, DL
机构：
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1972年 / 53卷 / 01期
关键词：
D O I：
10.1002/pssb.2220530126
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：245 / +
页数：1
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共 65 条
[51]   ELECTRON TRANSPORT IN INSB, INAS AND INP [J].
RODE, DL .
PHYSICAL REVIEW B, 1971, 3 (10) :3287-&
[52]  
SAMOILOVICH A, 1961, DOKL AKAD NAUK SSSR+, V139, P355
[53]  
SAMOILOVICH AG, 1962, SOV PHYS DOKL, V6, P606
[54]  
SHMARTSEV YV, 1970, SOV PHYS SEMICOND+, V3, P1425
[55]  
SHMARTSEV YV, 1969, FIZ TEKH POLUPROV, V3, P1601
[56]   INTERVALLEY SCATTERING SELECTION RULES FOR SI AND GE [J].
STREITWOLF, HW .
PHYSICA STATUS SOLIDI, 1970, 37 (01) :K47-+
[57]   ENERGY-BAND STRUCTURE OF BES, BESE, AND BETE [J].
STUKEL, DJ .
PHYSICAL REVIEW B, 1970, 2 (06) :1852-&
[58]   ELECTRICAL AND OPTICAL PROPERTIES OF VAPOR-GROWN GAP [J].
TAYLOR, RC ;
WOODS, JF ;
LORENZ, MR .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5404-&
[59]   ELECTRON MOBILITY AND IMPURITY CONCENTRATION IN N-GAP CRYSTALS GROWN BY SLOW COOLING OF GA SOLUTION [J].
TOYAMA, M ;
NAITO, M ;
KASAMI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (03) :358-&
[60]   CONDUCTION BAND EFFECTIVE MASS IN N-TYPE SILICON [J].
WALTON, AK ;
REIMANN, PL .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (06) :1410-&
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