ELECTRON MOBILITY IN GE, SI, AND GAP

被引:91
作者
RODE, DL
机构
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1972年 / 53卷 / 01期
关键词
D O I
10.1002/pssb.2220530126
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:245 / +
页数:1
相关论文
共 65 条
[1]   DIELECTRIC DISPERSION AND PHONON LINE SHAPE IN GALLIUM PHOSPHIDE [J].
BARKER, AS .
PHYSICAL REVIEW, 1968, 165 (03) :917-&
[2]   ON THE DIELECTRIC CONSTANT OF GERMANIUM AT MICROWAVE FREQUENCIES [J].
BAYNHAM, AC ;
GIBSON, AF ;
GRANVILLE, JW .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 75 (482) :306-309
[3]   INTERVALLEY-SCATTERING SELECTION RULES IN 3-V SEMICONDUCTORS [J].
BIRMAN, JL ;
LAX, M ;
LOUDON, R .
PHYSICAL REVIEW, 1966, 145 (02) :620-&
[4]  
BLANKENSHIP JL, PRIVATE COMMUNICATIO
[5]   THERMAL CONDUCTIVITY AND THERMOELECTRIC POWER OF HEAVILY DOPED N-TYPE SILICON [J].
BRINSON, ME ;
DUNSTAN, W .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (03) :483-&
[6]   NORMAL MODES OF GERMANIUM BY NEUTRON SPECTROMETRY [J].
BROCKHOUSE, BN ;
IYENGAR, PK .
PHYSICAL REVIEW, 1958, 111 (03) :747-754
[7]  
Brooks H., 1955, ADV ELECT ELECT PHYS, V7, P85
[8]   ELECTRICAL PROPERTIES OF SN-DOPED GAP [J].
CASEY, HC ;
ERMANIS, F ;
LUTHER, LC ;
DAWSON, LR ;
VERLEUR, HW .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2130-&
[9]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[10]  
CONWELL EM, 1967, HIGH FIELD TRANSPORT, P153