TEMPERATURE EFFECTS FOR TI/GAAS(110) INTERFACE FORMATION INVOLVING CLUSTER AND ATOM DEPOSITION

被引：25

作者：

ALDAO, CM

WADDILL, GD

ANDERSON, SG

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.40.2932

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2932 / 2939

页数：8

共 36 条

[1] 3D TRANSITION-METALS ON INP(110) - A COMPARATIVE-STUDY OF REACTIVE INTERFACE EVOLUTION
ALDAO, CM
VITOMIROV, IM
XU, F
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1988, 37 (11): : 6019 - 6026
[2] ALDAO CM, 1988, APPL PHYS LETT, V53, P2657
[3] ANDERSON S, UNPUB
[4] GAAS(110)-AL INTERFACES FORMED AT LOW-TEMPERATURE
BONAPACE, CR
LI, K
KAHN, A
[J]. JOURNAL DE PHYSIQUE, 1984, 45 (NC-5): : 409 - 418
[5] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[6] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES
CAO, R
MIYANO, K
KENDELEWICZ, T
CHIN, KK
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 998 - 1002
[7] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1978, 18 (04) : 1800 - 1812
[8] KINETIC-STUDY OF SCHOTTKY-BARRIER FORMATION OF IN ON GAAS(110) SURFACE
CHIN, KK
KENDELEWICZ, T
MCCANTS, C
CAO, R
MIYANO, K
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 969 - 972
[9] MANY-ELECTRON SINGULARITY IN X-RAY PHOTOEMISSION AND X-RAY LINE SPECTRA FROM METALS
DONIACH, S
SUNJIC, M
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (02): : 285 - &
[10] SCHOTTKY BARRIERS - MODELS AND TESTS
FREEOUF, JL
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 233 - 249