EFFECT OF ELECTRONEGATIVITY DIFFERENCE ON DEFECT CHEMISTRY IN LONE-PAIR SEMICONDUCTORS

被引：45

作者：

FRITZSCHE, H

GACZI, PJ

KASTNER, M

机构：

[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1978年 / 37卷 / 05期

关键词：

D O I：

10.1080/01418637808226453

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：593 / 600

页数：8

共 8 条

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[2] EFFECT OF CHARGED ADDITIVES ON CARRIER CONCENTRATIONS IN LONE-PAIR SEMICONDUCTORS [J].

FRITZSCHE, H ;

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PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03) :285-292

[3]

KASTNER M, 1978, PHILOS MAG, V37, P127, DOI 10.1080/13642817808245313

[4] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

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ADLER, D ;

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PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507

[5] DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORS [J].

KASTNER, M ;

FRITZSCHE, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (02) :199-215

[6] INCREASE IN CONDUCTIVITY OF CHALCOGENIDE GLASSES BY ADDITION OF CERTAIN IMPURITIES [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1976, 34 (06) :1101-1108

[7] STATES IN GAP IN GLASSY SEMICONDUCTORS [J].

STREET, RA ;

MOTT, NF .

PHYSICAL REVIEW LETTERS, 1975, 35 (19) :1293-1296

[8] LUMINESCENCE IN AMORPHOUS-SEMICONDUCTORS [J].

STREET, RA .

ADVANCES IN PHYSICS, 1976, 25 (04) :397-453

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