WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS

被引:108
作者
JAROS, M [1 ]
机构
[1] UNIV MASSACHUSETTS,DEPT PHYS & ASTRON,AMHERST,MA 01003
来源
PHYSICAL REVIEW B | 1977年 / 16卷 / 08期
关键词
D O I
10.1103/PhysRevB.16.3694
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3694 / 3706
页数:13
相关论文
共 43 条
[1]   APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS [J].
BEBB, HB .
PHYSICAL REVIEW, 1969, 185 (03) :1116-&
[2]   DETERMINATION OF OPTICAL IONIZATION CROSS SECTIONS IN GAP USING CHARGE STORAGE AND IMPURITY PHOTOVOLTAIC EFFECT [J].
BJORKLUND, G ;
GRIMMEISS, HG .
SOLID-STATE ELECTRONICS, 1971, 14 (07) :589-+
[3]   OPTICAL-PROPERTIES OF GOLD ACCEPTOR AND DONOR LEVELS IN SILICON [J].
BRAUN, S ;
GRIMMEISS, HG .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2658-2665
[4]  
BROWN S, 1973, SOLID STATE COMMUN, V12, P657
[5]   INFRARED DONOR-ACCEPTOR PAIR SPECTRA INVOLVING DEEP OXYGEN DONOR IN GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
HENRY, CH ;
FROSCH, CJ .
PHYSICAL REVIEW, 1968, 168 (03) :812-&
[6]   TEMPERATURE-DEPENDENCE OF GOLD ACCEPTOR ENERGY-LEVEL IN SILICON [J].
ENGSTROM, O ;
GRIMMEISS, HG .
APPLIED PHYSICS LETTERS, 1974, 25 (07) :413-415
[7]   SPECTRAL DISTRIBUTION OF PHOTOIONIZATION CROSS-SECTIONS BY PHOTOCONDUCTIVITY MEASUREMENTS [J].
GRIMMEISS, HG ;
LEDEBO, LA .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2155-2162
[8]   THEORY OF ISOTOPE-SHIFT FOR ZERO-PHONON OPTICAL-TRANSITIONS AT TRAPS IN SEMICONDUCTORS [J].
HEINE, V ;
HENRY, CH .
PHYSICAL REVIEW B, 1975, 11 (10) :3795-3803
[9]   ELECTRONIC BAND STRUCTURE AND COVALENCY IN DIAMOND-TYPE SEMICONDUCTORS [J].
HEINE, V ;
JONES, RO .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (04) :719-&
[10]   PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP .2. CAPTURE CROSS-SECTIONS [J].
HENRY, CH ;
KUKIMOTO, H ;
MILLER, GL ;
MERRITT, FR .
PHYSICAL REVIEW B, 1973, 7 (06) :2499-2507