WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS

被引：108

作者：

JAROS, M ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,DEPT PHYS & ASTRON,AMHERST,MA 01003

来源：

PHYSICAL REVIEW B | 1977年 / 16卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.16.3694

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3694 / 3706

页数：13

共 43 条

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[4] BROWN S, 1973, SOLID STATE COMMUN, V12, P657
[5] INFRARED DONOR-ACCEPTOR PAIR SPECTRA INVOLVING DEEP OXYGEN DONOR IN GALLIUM PHOSPHIDE
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[6] TEMPERATURE-DEPENDENCE OF GOLD ACCEPTOR ENERGY-LEVEL IN SILICON
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[7] SPECTRAL DISTRIBUTION OF PHOTOIONIZATION CROSS-SECTIONS BY PHOTOCONDUCTIVITY MEASUREMENTS
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[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2155 - 2162
[8] THEORY OF ISOTOPE-SHIFT FOR ZERO-PHONON OPTICAL-TRANSITIONS AT TRAPS IN SEMICONDUCTORS
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[J]. PHYSICAL REVIEW B, 1975, 11 (10): : 3795 - 3803
[9] ELECTRONIC BAND STRUCTURE AND COVALENCY IN DIAMOND-TYPE SEMICONDUCTORS
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[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (04): : 719 - &
[10] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP .2. CAPTURE CROSS-SECTIONS
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[J]. PHYSICAL REVIEW B, 1973, 7 (06) : 2499 - 2507

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