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- [2] INFLUENCE OF SURFACE POTENTIAL ON NOISE AND PHOTOCONDUCTIVITY OF P-TYPE INDIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 911 - &
- [3] PHOTOSENSITIVITY SPECTRUM OF P-TYPE INDIUM ANTIMONIDE SOVIET PHYSICS-SOLID STATE, 1960, 2 (02): : 219 - 221
- [4] THERMOELECTRIC POWER OF P-TYPE INDIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (11): : 1420 - +
- [5] RECOMBINATION PROCESSES IN P-TYPE INDIUM ANTIMONIDE PHYSICAL REVIEW, 1959, 115 (02): : 266 - 273
- [7] IMPACT IONIZATION IN P-TYPE INDIUM-ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (06): : 705 - 706
- [8] ELECTRICAL PROPERTIES OF COMPENSATED P-TYPE INDIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 227 - +
- [10] PHOTOMAGNETIC EMF IN P-TYPE INSB AT ROOM TEMPERATURE IN AN ALTERNATING MAGNETIC FIELD SOVIET PHYSICS-SOLID STATE, 1963, 4 (07): : 1428 - 1431