A METASTABLE ALPHA-PARTICLE IRRADIATION-INDUCED DEFECT IN N-GAAS

被引：6
|
作者：
AURET, FD
ERASMUS, RM
GOODMAN, SA
机构：
[1] Physics Department, University of Pretoria, Pretoria
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 4A期
关键词：
GAAS; RADIATION INDUCED DEFECTS; METASTABLE DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS);
D O I：
10.1143/JJAP.33.L491
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the introduction and characterization of a metastable alpha-particle irradiation induced defect, Ealpha8, in n-GaAs by deep level transient spectroscopy (DLTS) using Schottky barrier diodes. The Ealpha8 defect, with an energy level 0.18 eV below the conduction band, as determined by low-field DLTS measurements, could be reversibly transformed (removed and re-introduced) by employing zero and reverse bias anneals, respectively, in the 100-140 K temperature range. The transformation kinetics of Ealpha8 displayed first order behaviour and was found to be charge state dependant.
引用
收藏
页码：L491 / L493
页数：3
相关论文
共 50 条
  • [1] THE EFFECT OF ALPHA-PARTICLE AND PROTON IRRADIATION ON THE ELECTRICAL AND DEFECT PROPERTIES OF N-GAAS
    GOODMAN, SA
    AURET, FD
    MEYER, WE
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 90 (1-4): : 349 - 353
  • [2] DEFECT ANNEALING OF ALPHA-PARTICLE IRRADIATED N-GAAS
    GOODMAN, SA
    AURET, FD
    MYBURG, G
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 59 (03): : 305 - 310
  • [3] ELECTRONIC AND TRANSFORMATION PROPERTIES OF A METASTABLE DEFECT INTRODUCED IN N-TYPE GAAS BY ALPHA-PARTICLE IRRADIATION
    AURET, FD
    ERASMUS, RM
    GOODMAN, SA
    MEYER, WE
    PHYSICAL REVIEW B, 1995, 51 (24): : 17521 - 17525
  • [4] Investigations on the effect of alpha particle irradiation-induced defects near Pd/n-GaAs interface
    Jayavel, P
    Kumar, J
    Santhakumar, K
    Magudapathy, P
    Nair, KGM
    VACUUM, 2000, 57 (01) : 51 - 59
  • [5] Electric field enhanced emission from two alpha-particle irradiation induced traps in n-GaAs
    Meyer, WE
    Auret, FD
    Goodman, SA
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (1A): : L1 - L3
  • [6] Alpha-particle irradiation-induced defects in n-type germanium
    Kolkovsky, Vl.
    Petersen, M. Christian
    Larsen, A. Nylandsted
    APPLIED PHYSICS LETTERS, 2007, 90 (11)
  • [7] Electronic and transformation properties of a metastable defect introduced in epitaxially grown sulfur doped n-GaAs by particle irradiation
    Legodi, MJ
    Auret, FD
    Goodman, SA
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 71 : 96 - 99
  • [8] ALPHA-PARTICLE IRRADIATION-INDUCED CHANGE IN BRONCHOPULMONARY MACROPHAGE MORPHOLOGY, INVITRO
    SEED, TM
    NIIRO, GK
    SCANNING MICROSCOPY, 1991, 5 (02) : 565 - 572
  • [9] Electronic properties and introduction kinetics of a metastable radiation induced defect in n-GaAs
    Auret, FD
    Goodman, SA
    Meyer, WE
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1067 - 1071
  • [10] THERMAL-NEUTRON IRRADIATION-INDUCED DEFECTS IN N-GAAS AND THEIR ANNIHILATION BY ANNEALING PROCESSES
    KRAFT, A
    HECKNER, KH
    JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES, 1993, 174 (01): : 167 - 175
12345