ION-IMPLANTATION AND LOW-TEMPERATURE EPITAXIAL REGROWTH OF GAAS

[1] APPLETON BR, 1977, ION BEAM HDB MATERIA, P67

[2] Carter G., 1971, ION IMPLANTATION, P261

[3] A NEW TECHNIQUE FOR OBSERVING THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN THIN SURFACE-LAYERS ON SILICON-WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4106 - 4110

[4] TELLURIUM IMPLANTATION IN GAAS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 219 - 223

[5] EISEN FH, 1973, ION IMPLANTATION SEM, P631

[6] DECHANNELLING OF MEV HE IONS BY TWINNED REGIONS IN IMPLANTED SI CRYSTALS [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 37 (05): : 591 - 604

[7] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 85 - 89

[8] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 601 - &

[9] ELECTRICAL, RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF FURNACE ANNEALED ZINC IMPLANTED GAAS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (08) : 831 - &

[10] LAU SS, 1978, THIN FILMS INTERDIFF, pCH12

[1] APPLETON BR, 1977, ION BEAM HDB MATERIA, P67

[2] Carter G., 1971, ION IMPLANTATION, P261

[3] A NEW TECHNIQUE FOR OBSERVING THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN THIN SURFACE-LAYERS ON SILICON-WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4106 - 4110

[4] TELLURIUM IMPLANTATION IN GAAS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 219 - 223

[5] EISEN FH, 1973, ION IMPLANTATION SEM, P631

[6] DECHANNELLING OF MEV HE IONS BY TWINNED REGIONS IN IMPLANTED SI CRYSTALS [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 37 (05): : 591 - 604

[7] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 85 - 89

[8] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 601 - &

[9] ELECTRICAL, RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF FURNACE ANNEALED ZINC IMPLANTED GAAS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (08) : 831 - &

[10] LAU SS, 1978, THIN FILMS INTERDIFF, pCH12