SPACE CHARGE LIMITED CURRENT FLOW AND DEEP TRAPPING IN SELENIUM

被引：33

作者：

LANYON, HP

SPEAR, WE

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1961年 / 77卷 / 498期

关键词：

D O I：

10.1088/0370-1328/77/6/308

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1157 / &

共 18 条

[1] ELECTRIC CONTACT TO ZINC SULPHIDE CRYSTALS [J].

ALFREY, GF ;

COOKE, I .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (11) :1096-1098

[2] SOME ELECTRICAL PROPERTIES OF AMORPHOUS SELENIUM FILMS [J].

FOTLAND, RA .

[3]

IOFFE AP, 1960, PROGR SEMICONDUCTORS, P237

[4] PHOTOCONDUCTIVITY IN VACUUM COATED SELENIUM FILMS [J].

KECK, PH .

[5]

KROEGER FA, 1956, PHYS REV, V103, P279

[6]

LAMPERT MA, 1959, RCA REV, V20, P682

LAMPERT, MA .

PHYSICAL REVIEW, 1956, 103 (06) :1648-1656

[8]

MOSS TS, 1959, OPTICAL PROPERTIES S, P156

[9]

MOSS TS, 1952, PHOTOCONDUCTIVITY EL, P187

[10] 2-CARRIER SPACE-CHARGE-LIMITED CURRENT IN A TRAP-FREE INSULATOR [J].

PARMENTER, RH ;

RUPPEL, W .