SURFACE-BARRIER DETECTORS MADE OF P-TYPE SILICON (PREPARATION METHOD AND CHARACTERISTICS)

被引:0
作者
KUSHNIRU.VF
NIKITINA, RA
KHARITON.YP
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 7卷 / 07期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:933 / 935
页数:3
相关论文
共 12 条
[1]  
BUCK TM, 1967, SEMICONDUCTOR NUCLEA, P144
[2]  
CHAUDHRY R, 1971, BARC527 BHABH AT RES
[3]  
INSKEEP CN, 1963, ELECTRONIQUE NUCLEAI, P162
[4]  
KAUFMANN C, 1963, 2FKPHA12 ZENTR I KER, P10
[5]  
KUSHNIRUK VF, 1973, FIZ TEKH POLUPROV, V7, P1396
[6]  
LAZAREV VA, 1965, PRIB TEKH EKSP, P225
[7]  
MAKSIMOV YS, 1968, SOV PHYS SEMICOND+, V1, P867
[8]  
MAKSIMOV YS, 1967, FIZ TEKH POLUPROV, V1, P1039
[9]   FABRICATION OF SURFACE-BARRIER NUCLEAR PARTICLE DETECTORS FROM P-TYPE SILICON [J].
MATHEW, PJ ;
CHAPMAN, NG ;
COOTE, GE .
NUCLEAR INSTRUMENTS & METHODS, 1967, 49 (02) :245-&
[10]  
Protsenko A. V., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P1341