INTEGRATED QUANTUM-WELL INTERSUB-BAND PHOTODETECTOR AND LIGHT-EMITTING DIODE

被引：88

作者：

LIU, HC

LI, J

WASILEWSKI, ZR

BUCHANAN, M

机构：

[1] Institute for Microstructural Sciences, National Research Council, Ottawa

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 10期

关键词：

INTEGRATED OPTOELECTRONICS; INFRARED DETECTORS; INFRARED IMAGING; LIGHT EMITTING DIODES;

D O I：

10.1049/el:19950522

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors propose and demonstrate the integration of a quantum well intersub-band photodetector (QWIP) and a light emitting diode (LED) for making large two-dimensional focal plane arrays for thermal imaging applications. The newly developed QWIP technology is combined with the well established LED technology both based on GaAs and related epitaxially grown alloys, such as AlGaAs and InGaAs.

引用

页码：832 / 833

页数：2

共 5 条

[1] NEAR-UNITY QUANTUM EFFICIENCY OF ALGAAS/GAAS QUANTUM-WELL INFRARED DETECTORS USING A WAVE-GUIDE WITH A DOUBLY PERIODIC GRATING COUPLER
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[2] QUANTUM-WELL INFRARED PHOTODETECTORS
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[3] NEW 10 MU-M INFRARED DETECTOR USING INTERSUBBAND ABSORPTION IN RESONANT TUNNELING GAALAS SUPERLATTICES
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[4] SEGREGATION OF SI DELTA-DOPING IN GAAS-ALGAAS QUANTUM-WELLS AND THE CAUSE OF THE ASYMMETRY IN THE CURRENT-VOLTAGE CHARACTERISTICS OF INTERSUBBAND INFRARED DETECTORS
LIU, HC
WASILEWSKI, ZR
BUCHANAN, M
CHU, HY
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (06) : 761 - 763
[5] ULTRAHIGH SPONTANEOUS EMISSION QUANTUM EFFICIENCY, 99.7-PERCENT INTERNALLY AND 72-PERCENT EXTERNALLY, FROM ALGAAS/GAAS/ALGAAS DOUBLE HETEROSTRUCTURES
SCHNITZER, I
YABLONOVITCH, E
CANEAU, C
GMITTER, TJ
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (02) : 131 - 133

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