Multilevel metallization is becoming increasingly important for ultra large-scale integrated circuit (ULSI) fabrication. For this purpose, dielectric films with good filling capability are required. Plasma chemical vapor deposition (CVD) using H2O and tetraethoxysilane (TEOS) has been proposed for interlayer-metal dielectric gap-filling in advanced ULSI devices, because of its self-planarization characteristic. There remain problems, however, because film made using plasma CVD contains organic components which must be reduced to improve film quality. H2O Plasma treatment after deposition has been proposed to reduce organic components, but much time is required for this procedure. To satisfy the gap-filling requirement and obtain good film quality in a reasonable amount of time, a new CVD method using NH3 as a catalyst is proposed in this paper. NH3 as a catalyst accelerates the elimination of ethoxy groups and reduces the organic components.
