HETEROEPITAXIAL DIAMOND GROWTH ON (100) SILICON

被引：219

作者：

JIANG, X

KLAGES, CP

机构：

[1] Fraunhofer-Institut für Schicht- und Oberflächentechnik (FhG-IST), W-2000 Hamburg 54

来源：

DIAMOND AND RELATED MATERIALS | 1993年 / 2卷 / 5-7期

关键词：

D O I：

10.1016/0925-9635(93)90282-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly oriented diamond films have been deposited on mirror-polished single-crystal (100) silicon by microwave plasma chemical vapour deposition. The crystallites are grown with their (001) planes parallel to silicon (001) and their [110] directions parallel to silicon [110], as shown by scanning electron microscopy and X-ray diffraction analysis.

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页码：1112 / 1113

页数：2

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