REDUCTION OF P-DOPED MIRROR ELECTRICAL-RESISTANCE OF GAAS/ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS BY DELTA-DOPING

被引：31
作者：
KOJIMA, K
MORGAN, RA
MULLALY, T
GUTH, GD
FOCHT, MW
LEIBENGUTH, RE
ASOM, MT
机构：
[1] AT&T Bell Laboratories, Solid State Technology Center, Breinigsville
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 20期
关键词：
SEMICONDUCTOR LASERS; LASERS; DELTA-DOPING;
D O I：
10.1049/el:19931179
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Letter reports the reduction of p-mirror electrical resistance using a very simple delta doping technique. The differential resistance was reduced almost by half, and the peak output power was increased by about 40% with delta doping. No significant difference was observed in threshold current and efficiency.
引用
收藏
页码：1771 / 1772
页数：2
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