SILICON SOLAR-CELL OF 16.8 MU-M THICKNESS AND 14.7-PERCENT EFFICIENCY

被引：34

作者：

WERNER, JH

KOLODINSKI, S

RAU, U

ARCH, JK

BAUSER, E

机构：

[1] Max-Planck-Institute für Festkörperforschung, 7000 Stuttgart 80

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 23期

关键词：

D O I：

10.1063/1.109169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Liquid phase epitaxy provides a new impetus for thin film photovoltaics based on silicon; we apply this method for about 20-mum-thick solar cells with high efficiencies. The analysis of internal quantum efficiency measurements reveals that the open circuit voltages around 660 mV arise from an excellent electronic quality of our thin silicon films. Their effective minority carrier diffusion lengths range up to 317 mum, a value that exceeds the thickness of the layers by an order of magnitude. The conversion efficiencies exceed 14% with a record value of 14.7% for a 16.8-mum-thick epitaxial layer without special antireflecting coatings. The high open circuit voltages promise a possible boost of the efficiency toward 20% by applying light trapping schemes to optimize the short circuit current.

引用

页码：2998 / 3000

页数：3

共 50 条

[31] SPECTRAL RESPONSE AND EFFICIENCY OF A SILICON SOLAR-CELL BELOW WATER-SURFACE [J].

MUADDI, JA ;

JAMAL, MA .

SOLAR ENERGY, 1992, 49 (01) :29-33

[32] 60 PERCENT EFFICIENCY 2ND HARMONIC-GENERATION FROM 12.8 MU-M RADIATION [J].

SHAW, ED ;

PATEL, CKN ;

CHICHESTER, RJ .

OPTICS COMMUNICATIONS, 1980, 33 (02) :221-224

[33] SUB-5 MU-M THIN-FILM C-SI SOLAR-CELL AND OPTICAL CONFINEMENT BY DIFFUSE REFLECTIVE-SUBSTRATE [J].

SHIMOKAWA, R ;

ISHII, K ;

NISHIKAWA, H ;

TAKAHASHI, T ;

HAYASHI, Y ;

SAITO, I ;

NAGAMINE, F ;

IGARI, S .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1994, 34 (1-4) :277-283

[34] CULNS2 BASED THIN-FILM SOLAR-CELL WITH 10.2-PERCENT EFFICIENCY [J].

SCHEER, R ;

WALTER, T ;

SCHOCK, HW ;

FEARHEILEY, ML ;

LEWERENZ, HJ .

APPLIED PHYSICS LETTERS, 1993, 63 (24) :3294-3296

[35] SAFETY CONSIDERATIONS FOR HIGH-EFFICIENCY CRYSTALLINE-SILICON SOLAR-CELL FABRICATION [J].

RUBY, DS .

CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, :523-528

[36] IMPROVEMENT IN LOW-RESISTIVITY SILICON SOLAR-CELL EFFICIENCY BY ELECTRICAL AND OPTICAL CONFINEMENT [J].

GAROZZO, M ;

FORNARINI, L ;

PERUZZI, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (07) :1807-1810

[37] HIGH-LOW JUNCTION EMITTER STRUCTURE FOR IMPROVING SILICON SOLAR-CELL EFFICIENCY [J].

SAH, CT ;

LINDHOLM, FA ;

FOSSUM, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (01) :66-67

[38] Fabrication of a 100 mu m thick crystalline silicon solar cell [J].

Hovinen, A .

PHYSICA SCRIPTA, 1997, T69 :167-169

[39] 17-PERCENT EFFICIENT THIN-FILM SILICON SOLAR-CELL BY LIQUID-PHASE EPITAXY [J].

BLAKERS, AW ;

WEBER, KJ ;

STUCKINGS, MF ;

ARMAND, S ;

MATLAKOWSKI, G ;

CARR, AJ ;

STOCKS, MJ ;

CUEVAS, A ;

BRAMMER, T .

PROGRESS IN PHOTOVOLTAICS, 1995, 3 (03) :193-195

[40] THE HIGH-EFFICIENCY (17.1-PERCENT) WSE2 PHOTO-ELECTROCHEMICAL SOLAR-CELL [J].

PRASAD, G ;

SRIVASTAVA, ON .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1988, 21 (06) :1028-1030

← 1 2 3 4 5 →