MASS-SPECTROMETRIC AND THERMODYNAMIC STUDIES OF VAPOR-PHASE GROWTH OF IN(1-X)GAXP

被引：11

作者：

BANS, VS ^{[1
]}

ETTENBERG, M ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1973年 / 34卷 / 06期

关键词：

D O I：

10.1016/S0022-3697(73)80020-4

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1119 / 1129

页数：11

共 24 条

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[3] MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1) [J].

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ETIENNE, D ;

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[5]

BREWER L, 1950, CHEMISTRY METALLURGY

[6] THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION [J].

FERGUSSON, RR ;

GABOR, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (05) :585-592

[7] PREPARATION OF GAASXP1-X BY VAPOR PHASE REACTION [J].

FINCH, WF ;

MEHAL, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :814-817

[8]

GLASSNER A, 1957, 5750 ARG NAT LAB REP

[9] BAND STRUCTURE OF INGAP FROM PRESSURE EXPERIMENTS [J].

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JAYARAMA.A ;

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[10]

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