MATERIAL TRANSPORT IN HIGH-PRESSURE DIODE SPUTTERING

被引：0

作者：

HOLLMANN, EK

ZAITSEV, AG

机构：

[1] Electrical Engineering Inst, St. Petersburg

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1993年 / 26卷 / 04期

关键词：

D O I：

10.1088/0022-3727/26/4/028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of gas pressure and re-emission of sputtered species from the electrodes on the deposition rate of these species is considered theoretically it is shown that increase of gas pressure makes the deposition rate comparatively insensitive to re-emission of sputtered material from both electrodes. This provides the principal advantage for multi-component thin-film preparation.

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页码：711 / 712

页数：2

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