SURFACE-STRUCTURE AND ELECTRONIC PROPERTY OF REDUCED SRTIO3(100) SURFACE OBSERVED BY SCANNING TUNNELING MICROSCOPY SPECTROSCOPY

被引：107
作者：
TANAKA, H
MATSUMOTO, T
KAWAI, T
KAWAI, S
机构：
[1] The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Osaka
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 3B期
关键词：
STM; STS; RHEED; SRTIO3; SURFACE RECONSTRUCTION; OXYGEN VACANCY;
D O I：
10.1143/JJAP.32.1405
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have obtained the scanning tunneling microscopy (STM) images and scanning tunneling spectroscopy (STS) data with atomic-scale resolution for a SrTiO3(100) surface annealed in ultrahigh vacuum (UHV) at 1200-degrees-C. A square-root 5 x square-root 5 - R26.6-degrees surface superstructure indicating oxygen vacancy ordering has been observed. The STS data provide evidence for a localized surface state arising from oxygen vacancies at 1.35 eV below the Fermi level. STM images of the square-root 5 X square-root 5 structure correspond to the surface orbital of the ordered Ti-oxygen vacancy complex.
引用
收藏
页码：1405 / 1409
页数：5
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