PHOTOIRRADIATION EFFECT ON PHOTOLUMINESCENCE FROM ANODIZED POROUS SILICONS AND LUMINESCENCE MECHANISM

被引：37

作者：

SUEMUNE, I

NOGUCHI, N

YAMANISHI, M

机构：

[1] Hiroshima University, Higashi-Hiroshima, 724

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 4B期

关键词：

POROUS SILICON; ANODIZATION; PHOTOIRRADIATION; QUANTUM SIZE EFFECT; PHOTOLUMINESCENCE; OXIDATION;

D O I：

10.1143/JJAP.31.L494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoirradiation effect on photoluminescence (PL) from anodized porous silicons was studied. Although PL from Si anodized in artificial light decreased with photoirradiation, PL from Si anodized in the dark was found to increase with photoirradiation in air. The main factor for the photoirradiation effect was attributed to oxidation in the surface layer by transmission infrared spectroscopy. During the temporal spectral change in the Si samples anodized in the dark, discrete PL peaks were observed. These PL peaks were excellently modeled by a quantum size effect. The observed blue shift of the PL spectra is interpreted to be due to the reduction of the microparticle size in the topmost amorphous layer with oxidation.

引用

页码：L494 / L497

页数：4

共 11 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[2] INFRARED-SPECTROSCOPY OF SI(111) AND SI(100) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J].

CHABAL, YJ ;

HIGASHI, GS ;

RAGHAVACHARI, K ;

BURROWS, VA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :2104-2109

[3] 3-DIMENSIONAL QUANTUM WELL EFFECTS IN ULTRAFINE SILICON PARTICLES [J].

FURUKAWA, S ;

MIYASATO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2207-L2209

[4] QUANTUM SIZE EFFECTS ON THE OPTICAL BAND-GAP OF MICROCRYSTALLINE SI-H [J].

FURUKAWA, S ;

MIYASATO, T .

PHYSICAL REVIEW B, 1988, 38 (08) :5726-5729

[5] HYDROGEN DESORPTION-KINETICS FROM MONOHYDRIDE AND DIHYDRIDE SPECIES ON SILICON SURFACES [J].

GUPTA, P ;

COLVIN, VL ;

GEORGE, SM .

PHYSICAL REVIEW B, 1988, 37 (14) :8234-8243

[6] ELECTROLUMINESCENCE IN THE VISIBLE RANGE DURING ANODIC-OXIDATION OF POROUS SILICON FILMS [J].

HALIMAOUI, A ;

OULES, C ;

BOMCHIL, G ;

BSIESY, A ;

GASPARD, F ;

HERINO, R ;

LIGEON, M ;

MULLER, F .

APPLIED PHYSICS LETTERS, 1991, 59 (03) :304-306

[7] INTENSE PHOTOLUMINESCENCE FROM LATERALLY ANODIZED POROUS SI [J].

JUNG, KH ;

SHIH, S ;

HSIEH, TY ;

KWONG, DL ;

LIN, TL .

APPLIED PHYSICS LETTERS, 1991, 59 (25) :3264-3266

[8] INITIAL OXIDATION PROCESS OF ANODIZED POROUS SILICON WITH HYDROGEN-ATOMS CHEMISORBED ON THE INNER SURFACE [J].

KATO, Y ;

ITO, T ;

HIRAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1406-L1409

[9] EFFICIENT VISIBLE PHOTOLUMINESCENCE FROM POROUS SILICON [J].

KOSHIDA, N ;

KOYAMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (7B) :L1221-L1223

[10]

NOGUCHI N, 1992, IN PRESS JPN J APPL, V31

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