DOPING OF GALLIUM ARSENIDE BY IMPLANTATION OF ZINC IONS

被引：0

作者：

ZELEVINSKAYA, VM

KACHURIN, GA

PRIDACHI.NB

SMIRNOV, LS

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1971年 / 4卷 / 09期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1529 / +

页数：1

共 13 条

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[2] SOLUBILITIES + DISTRIBUTION COEFFICIENTS OF ZN IN GAAS + GAP [J].

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[3] HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS [J].

ERMANIS, F ;

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[4] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION [J].

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DONNELLY, JP ;

LINDLEY, WT .

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[5]

GOLDSTEIN B, 1960, PHYS REV, V118, P1025

[6] ELECTRICAL PROPERTIES OF ZINC AND CADMIUM ION IMPLANTED LAYERS IN GALLIUM ARSENIDE [J].

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MARSH, OJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) :488-&

[7] CONDUCTIVITY AND HALL MOBILITY OF ION-IMPLANTED SILICON IN SEMI-INSULATING GALLIUM ARSENIDE [J].

SANSBURY, JD ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1969, 14 (10) :311-&

[8] MEASUREMENT OF SHEET RESISTIVITIES WITH THE 4-POINT PROBE [J].

SMITS, FM .

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[9]

SUBASHIEV BK, 1960, FIZ TVERD TELA, V2, P1169

[10]

SUBASHIEV BK, 1960, SOV PHYS-SOLID STATE, V2, P1059

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