ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE FROM SI1-XGEX ALLOYS

被引：69

作者：

ROWELL, NL

NOEL, JP

HOUGHTON, DC

BUCHANAN, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 09期

关键词：

D O I：

10.1063/1.104454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroluminescence has been observed from Si(1-x)Ge(x)/Si p-n heterostructures grown by molecular beam epitaxy and fabricated into mesa diodes. The luminescence from each sample was observed at temperatures up to 80 K with diodes forward biased at current densities up to 50 A/cm2. For x = 0.18 and x = 0.25, broad (approximately 80 meV) electroluminescence peaks were observed at 890 and 860 meV, respectively. These energies as well as the peak shapes and quantum efficiencies (approximately 1%) were the same as those from corresponding photoluminescence spectra.

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页码：957 / 958

页数：2

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