FAILURE OF ALUMINIUM CONTACTS TO SILICON IN SHALLOW DIFFUSED TRANSISTORS

被引:30
|
作者
MCCARTHY, J
机构
关键词
D O I
10.1016/0026-2714(70)90671-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:187 / &
相关论文
共 50 条
  • [21] STUDY OF CONTACTS OF A DIFFUSED RESISTOR
    TING, CY
    CHEN, CY
    SOLID-STATE ELECTRONICS, 1971, 14 (06) : 433 - &
  • [22] PLATINUM SILICIDE OHMIC CONTACTS TO SHALLOW JUNCTIONS IN SILICON.
    Cohen, S.S.
    Piacente, P.A.
    Gildenblat, G.
    Brown, D.M.
    Journal of Applied Physics, 1982, 53 (12): : 8856 - 8862
  • [23] ELECTROMIGRATION FAILURE AT ALUMINUM-SILICON CONTACTS
    PROKOP, GS
    JOSEPH, RR
    JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2595 - &
  • [24] Contact properties of electroless nickel plated contacts on diffused p+ silicon surfaces
    To, Alexander
    Zhang, Tian
    Hoex, Bram
    Lennon, Alison
    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), 2018, : 1066 - 1072
  • [25] Diffused silicon transistors and switches (1954-55): The beginning of integrated circuit technology
    Holonyak, N
    CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY, 2003, 683 : 40 - 60
  • [26] PUSH-OUT EFFECT IN SILICON N-P-N DIFFUSED TRANSISTORS
    LEE, DB
    PHILIPS RESEARCH REPORTS, 1974, : 1 - 131
  • [28] Aluminium press-on contacts for glass-to-silicon anodic bonding
    Delft University of Technology, Electron. Instrumentation Laboratory, PO Box 5031, 2600 GA Delft, Netherlands
    Sens Actuators A Phys, 1-3 (151-155):
  • [29] OHMIC CONTACTS BETWEEN EVAPORATED ALUMINIUM AND N-TYPE SILICON
    NORTHROP, DC
    PUDDY, DC
    NUCLEAR INSTRUMENTS & METHODS, 1971, 94 (03): : 557 - &
  • [30] Aluminium press-on contacts for glass-to-silicon anodic bonding
    Kadar, Z
    Bossche, A
    Mollinger, J
    SENSORS AND ACTUATORS A-PHYSICAL, 1996, 52 (1-3) : 151 - 155