RADIATIVE RECOMBINATION FROM PHOTOEXCITED HOT CARRIERS IN GAAS

被引：158

作者：

SHAH, J

LEITE, RCC

机构：

[1] Bell Telephone Laboratories, Holmdel

来源：

PHYSICAL REVIEW LETTERS | 1969年 / 22卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.22.1304

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first observation of the radiative recombination from photoexcited hot carriers in GaAs. Our results show that the hot carriers have an effective temperature which implies a Maxwellian distribution. This temperature increases with the excitation intensity. An empirical relationship between this temperature and the power transferred from the hot carriers to the lattice is in quantitative agreement with the theoretical predictions for carrier scattering by polar optical modes. © 1969 The American Physical Society.

引用

页码：1304 / &

共 14 条

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