ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE

被引：76

作者：

BEAN, JC

机构：

[1] Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 07期

关键词：

D O I：

10.1063/1.90453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arbitrary doping profiles with abrupt transitions have been produced in n-type Si MBE films. Changes in doping level were produced with a resolution unattainable by CVD growth and at depths inaccessible to ion implantation. It was found, however, that films must be grown above ∼850°C. Below that temperature doping profiles were distorted and Sb segregated strongly on the sample surface.

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页码：654 / 656

页数：3

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