ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE

被引：76
作者：
BEAN, JC
机构：
[1] Bell Laboratories, Murray Hill
来源：
APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 07期
关键词：
D O I：
10.1063/1.90453
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Arbitrary doping profiles with abrupt transitions have been produced in n-type Si MBE films. Changes in doping level were produced with a resolution unattainable by CVD growth and at depths inaccessible to ion implantation. It was found, however, that films must be grown above ∼850°C. Below that temperature doping profiles were distorted and Sb segregated strongly on the sample surface.
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页码：654 / 656
页数：3
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