ORDERING IN GAAS1-XSBX GROWN BY MOLECULAR-BEAM EPITAXY

被引：102

作者：

IHM, YE ^{[1
]}

OTSUKA, N ^{[1
]}

KLEM, J ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 24期

关键词：

D O I：

10.1063/1.98277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2013 / 2015

页数：3

共 12 条

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APPLIED PHYSICS LETTERS, 1987, 50 (11) :673-675

[4] ORDERED STRUCTURES IN GAAS0.5SB0.5 ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

JEN, HR ;

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[5] MOLECULAR-BEAM EPITAXIAL-GROWTH AND LOW-TEMPERATURE OPTICAL CHARACTERIZATION OF GAAS0.5SB0.5 ON INP [J].

KLEM, J ;

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IHM, YE ;

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APPLIED PHYSICS LETTERS, 1987, 50 (19) :1364-1366

[6] LONG-RANGE ORDER IN ALXGA1-XAS [J].

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WILKIE, EL .

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[7] LONG-RANGE ORDER IN XGA1-XAS [J].

KUAN, TS ;

WANG, WI ;

WILKIE, EL .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :51-53

[8] 1ST-PRINCIPLES CALCULATION OF SEMICONDUCTOR-ALLOY PHASE-DIAGRAMS [J].

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PHYSICAL REVIEW LETTERS, 1987, 58 (01) :49-52

[9]

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[10]

Nakayama H., 1986, I PHYSICS C SERIES, V79, P289

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