STUDY OF RESONANT ELECTRON-TUNNELING WITH A SCANNING TUNNELING MICROSCOPE

[1] TRANSPORT PROCESSES VIA LOCALIZED STATES IN THIN A-SI TUNNEL BARRIERS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (03) : 324 - 327

[2] CONDUCTIVITY SENSITIVITY OF INELASTIC SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW B, 1985, 32 (02): : 1336 - 1338

[3] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (01) : 57 - 61

[4] Burstein E., 1973, TUNNELING PHENOMENA

[5] Dalidchik F. I., 1984, Soviet Physics - JETP, V60, P795

[6] DEMKOV YN, 1975, METOD POTENTSIALOV N

[7] Khaikin M. S., 1985, Soviet Technical Physics Letters, V11, P511

[8] EVIDENCE FOR RESONANT TUNNELING OF ELECTRONS VIA SODIUM-IONS IN SILICON DIOXIDE [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (16) : 1848 - 1851

[9] LIFSHITZ IM, 1979, SOV PHYS JETP, V50, P499

[10] DISCRETE RESISTANCE SWITCHING IN SUBMICROMETER SILICON INVERSION-LAYERS - INDIVIDUAL INTERFACE TRAPS AND LOW-FREQUENCY (1-F QUESTIONABLE) NOISE [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (03) : 228 - 231

[1] TRANSPORT PROCESSES VIA LOCALIZED STATES IN THIN A-SI TUNNEL BARRIERS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (03) : 324 - 327

[2] CONDUCTIVITY SENSITIVITY OF INELASTIC SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW B, 1985, 32 (02): : 1336 - 1338

[3] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (01) : 57 - 61

[4] Burstein E., 1973, TUNNELING PHENOMENA

[5] Dalidchik F. I., 1984, Soviet Physics - JETP, V60, P795

[6] DEMKOV YN, 1975, METOD POTENTSIALOV N

[7] Khaikin M. S., 1985, Soviet Technical Physics Letters, V11, P511

[8] EVIDENCE FOR RESONANT TUNNELING OF ELECTRONS VIA SODIUM-IONS IN SILICON DIOXIDE [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (16) : 1848 - 1851

[9] LIFSHITZ IM, 1979, SOV PHYS JETP, V50, P499

[10] DISCRETE RESISTANCE SWITCHING IN SUBMICROMETER SILICON INVERSION-LAYERS - INDIVIDUAL INTERFACE TRAPS AND LOW-FREQUENCY (1-F QUESTIONABLE) NOISE [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (03) : 228 - 231