LOCALIZATION BEHAVIOR OF DONOR-RELATED COMPLEXES IN INP UNDER HYDROSTATIC-PRESSURE

被引:1
作者
GIL, B
CHEN, Y
MATHIEU, H
机构
来源
PHYSICAL REVIEW B | 1987年 / 36卷 / 02期
关键词
D O I
10.1103/PhysRevB.36.1090
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1090 / 1093
页数:4
相关论文
共 29 条
  • [1] BINDING-ENERGY OF EXCITON-NEUTRAL DONOR COMPLEXES
    ADAMOWSKI, J
    BEDNAREK, S
    SUFFCZYNSKI, M
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (08): : L325 - L328
  • [2] PRESSURE-DEPENDENCE OF THE HOLE MOBILITY IN GAAS, INP AND (GAIN)(ASP)/INP
    ADAMS, AR
    SHANTHARAMA, LG
    [J]. PHYSICA B & C, 1986, 139 (1-3): : 419 - 422
  • [3] PRESSURE-INDUCED CHANGES IN THE EFFECTIVE MASS OF ELECTRONS IN GAAS, INP AND (GAIN)(ASP)/INP
    ADAMS, AR
    SHANTHARAMA, LG
    NICHOLAS, RJ
    SARKAR, CK
    [J]. PHYSICA B & C, 1986, 139 (1-3): : 401 - 403
  • [4] [Anonymous], 1966, SEMICONDUCTORS SEMIM
  • [5] BIMBERG D, 1977, PHYSICA B, V81, P139
  • [6] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND
    CAMPHAUSEN, DL
    CONNELL, GAN
    PAUL, W
    [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (04) : 184 - +
  • [7] CHANG YC, 1979, SOLID STATE COMMUN, V33, P187
  • [8] DEPENDENCE OF THE EXCITON POLARITON REFLECTIVITY SPECTRUM OF INP UPON HYDROSTATIC-PRESSURE
    CHEN, Y
    GIL, B
    KADRI, A
    ALLEGRE, J
    CAMASSEL, J
    MATHIEU, H
    [J]. PHYSICA B & C, 1986, 139 (1-3): : 491 - 494
  • [9] Dean P. J., 1979, Excitons, P55, DOI 10.1007/978-3-642-81368-9_3
  • [10] HYDROSTATIC-PRESSURE DEPENDENCE OF BOUND EXCITONS IN GAP
    GIL, B
    BAJ, M
    CAMASSEL, J
    MATHIEU, H
    LAGUILLAUME, CB
    MESTRES, N
    PASCUAL, J
    [J]. PHYSICAL REVIEW B, 1984, 29 (06): : 3398 - 3407