REDUCTION OF POLY-SI DISSOLUTION AND CONTACT RESISTANCE AT AL-N-POLY-SI INTERFACES IN INTEGRATED-CIRCUITS

被引：10
作者：
NAGUIB, HM
HOBBS, LH
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 01期
关键词：
D O I：
10.1149/1.2131386
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：169 / 171
页数：3
相关论文
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