LUMINESCENCE AND ABSORPTION PROPERTIES OF N ISOELECTRONIC TRAP IN GAAS1-XPX

被引：0

作者：

WOLFORD, DJ ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,URBANA,IL 61801

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1977年 / 22卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：378 / 378

页数：1

共 50 条

[31] REFLECTIVITY OF GAAS1-XPX ALLOYS
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THOMPSON, AG
RUBENSTEIN, M
[J]. PHYSICAL REVIEW LETTERS, 1965, 15 (16) : 670 - +
[32] GAAS1-XPX PHOTODIODES FOR CAMERAS
SUZUKI, H
NAKAMURA, T
KIYOHASHI, K
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1976, 66 (10) : 1080 - 1080
[33] NITROGEN TRAP IN THE SEMICONDUCTOR ALLOYS GAAS1-XPX AND ALXGA1-XAS
WOLFORD, DJ
HSU, WY
DOW, JD
STREETMAN, BG
[J]. JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) : 863 - 867
[34] SPONTANEOUS AND STIMULATED EMISSION INVOLVING N ISOELECTRONIC TRAP IN GAAS1-XPX-N AND IN 1-XGAXP-N
HOLONYAK, N
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (01): : 108 - 109
[35] ABSORPTION AND PHOTOLUMINESCENT MEASUREMENTS IN INDIRECT, NITROGEN DOPED GAAS1-XPX
GAL, M
GOROG, T
KERESZTURY, A
[J]. SOLID STATE COMMUNICATIONS, 1977, 21 (05) : 491 - 493
[36] THEORETICAL STUDY ON THE NITROGEN ISOELECTRONIC TRAP IN GaAs1 - xPx.
Li Hanqiu
Lu Fen
[J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1983, 4 (02): : 187 - 190
[37] ELECTRICAL TRANSPORT PROPERTIES OF ZN DOPED GAAS1-XPX
PENAR, JD
COHEN, MM
BEDARD, FD
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (12): : 1605 - 1605
[38] STIMULATED EMISSION AND LASER OPERATION (CW, 77 DEGREES K) OF DIRECT AND INDIRECT GAAS1-XPX ON NITROGEN ISOELECTRONIC TRAP TRANSITIONS
SCIFRES, DR
ZACK, GW
HOLONYAK, N
KEUNE, DL
MACKSEY, HM
DUPUIS, RD
GROVES, WO
CRAFORD, MG
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2368 - &
[39] EPITAXIAL GROWTH OF GAAS1-XPX
OGIRIMA, M
KURATA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (10) : 1474 - &
[40] DONOR STATES IN GAAS1-XPX
KOPYLOV, AA
PIKHTIN, AN
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (11): : 1257 - 1260

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