共 50 条
- [1] PROPERTIES OF N ISOELECTRONIC TRAP IN GAAS1-XPX BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (01): : 41 - 41
- [3] SEMI-PHENOMENOLOGICAL THEORY OF N ISOELECTRONIC TRAP IN GAAS1-XPX BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (01): : 41 - 41
- [5] EFFECT OF COMPOSITION AND PRESSURE ON NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX PHYSICAL REVIEW B, 1976, 14 (02): : 685 - 690
- [6] INFRARED LUMINESCENCE OF GAAS1-XPX PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 18 (02): : K139 - K141
- [7] PHOTO-LUMINESCENCE AND ELECTRO-LUMINESCENCE OF NITROGEN ISOELECTRONIC TRAPS IN GAAS1-XPX RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 211 - 216
- [9] N ISOELECTRONIC TRAPS IN GAAS AND GAAS1-XPX (X-LESS-THAN-0.20) INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 477 - 484
- [10] LUMINESCENCE DECAYS OF N-BOUND EXCITONS IN GAAS1-XPX PHYSICAL REVIEW B, 1983, 27 (04) : 2294 - 2300