PHOTOLUMINESCENCE AT DISLOCATION IN GAAS

被引：84

作者：

HEINKE, W

QUEISSER, HJ

机构：

[1] WACKER CHEMITRONIC,8263 BURGHAUSEN,EAST GERMANY

[2] MAX PLANCK INST FESTKORPER FORSCH,7 STUTTGART 1,WEST GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1974年 / 33卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.33.1082

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1082 / 1084

页数：3

共 18 条

[1]

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[2]

[Anonymous], SEMICONDUCTORS SEMIM

[3] ANALYSIS OF N-TYPE GAAS WITH ELECTRON-BEAM-EXCITED RADIATIVE RECOMBINATION [J].

CASEY, HC ;

KAISER, RH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :149-+

[4]

COTTRELL AH, 1953, DISLOCATIONS PLASTIC, P56

[5] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J].

DELOACH, BC ;

HAKKI, BW ;

HARTMAN, RL ;

DASARO, LA .

PROCEEDINGS OF THE IEEE, 1973, 61 (07) :1042-1044

[6] CATHODOLUMINESCENCE STUDY OF PLASTICALLY DEFORMED GAAS [J].

ESQUIVEL, AL ;

LIN, WN ;

WITTRY, DB .

APPLIED PHYSICS LETTERS, 1973, 22 (08) :414-416

[7]

GRIPPIUS AA, 1962, FIZ TVERD TELA, V4, P2426

[8]

GRIPPIUS AA, 1963, SOV PHYS SOLID STATE, V4, P1777

[9]

HEINKE W, 1974, JUL P INT C LATT DEF

[10]

HEINKE W, 1974, VERH DEUT PHYS GES, V8, P602

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