PHOTOLUMINESCENCE AT DISLOCATION IN GAAS

[1] Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[2] [Anonymous], SEMICONDUCTORS SEMIM

[3] ANALYSIS OF N-TYPE GAAS WITH ELECTRON-BEAM-EXCITED RADIATIVE RECOMBINATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 149 - +

[4] COTTRELL AH, 1953, DISLOCATIONS PLASTIC, P56

[5] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044

[6] CATHODOLUMINESCENCE STUDY OF PLASTICALLY DEFORMED GAAS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 414 - 416

[7] GRIPPIUS AA, 1962, FIZ TVERD TELA, V4, P2426

[8] GRIPPIUS AA, 1963, SOV PHYS SOLID STATE, V4, P1777

[9] HEINKE W, 1974, JUL P INT C LATT DEF

[10] HEINKE W, 1974, VERH DEUT PHYS GES, V8, P602

[1] Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[2] [Anonymous], SEMICONDUCTORS SEMIM

[3] ANALYSIS OF N-TYPE GAAS WITH ELECTRON-BEAM-EXCITED RADIATIVE RECOMBINATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 149 - +

[4] COTTRELL AH, 1953, DISLOCATIONS PLASTIC, P56

[5] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044

[6] CATHODOLUMINESCENCE STUDY OF PLASTICALLY DEFORMED GAAS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 414 - 416

[7] GRIPPIUS AA, 1962, FIZ TVERD TELA, V4, P2426

[8] GRIPPIUS AA, 1963, SOV PHYS SOLID STATE, V4, P1777

[9] HEINKE W, 1974, JUL P INT C LATT DEF

[10] HEINKE W, 1974, VERH DEUT PHYS GES, V8, P602