RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GAAS P-N JUNCTIONS

被引：21

作者：

LUCOVSKY, G

REPPER, CJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1963年 / 3卷 / 05期

关键词：

D O I：

10.1063/1.1753873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：71 / 72

页数：2

共 11 条

[1] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J].

HALL, RN ;

CARLSON, RO ;

SOLTYS, TJ ;

FENNER, GE ;

KINGSLEY, JD .

PHYSICAL REVIEW LETTERS, 1962, 9 (09) :366-&

[2]

HALL RN, 1963, B AM PHYS SOC, V11, P191

[3]

HILSUM C, 1961, SEMICONDUCTING, V3, P75

[4]

KEYES RJ, 1962, P IRE, V50, P1822

[5] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J].

NATHAN, MI ;

DUMKE, WP ;

BURNS, G ;

DILL, FH ;

LASHER, G .

APPLIED PHYSICS LETTERS, 1962, 1 (03) :62-64

[6] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J].

NELSON, DF ;

GERSHENZON, M ;

ASHKIN, A .

APPLIED PHYSICS LETTERS, 1963, 2 (09) :182-184

[7]

PANKOVE JI, 1962, EL SOC EL DIV ABSTR, V2, P71

[8]

PUTLEY EH, 1958, RRE1512 MEM

[9] SEMICONDUCTOR MASER OF GAAS [J].

QUIST, TM ;

REDIKER, RH ;

KEYES, RJ ;

KRAG, WE ;

LAX, B ;

MCWHORTER, AL ;

ZEIGLER, HJ .

APPLIED PHYSICS LETTERS, 1962, 1 (04) :91-92

[10] IMPURITY BAND IN SEMICONDUCTORS WITH SMALL EFFECTIVE MASS [J].

STERN, F ;

TALLEY, RM .

PHYSICAL REVIEW, 1955, 100 (06) :1638-1643

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