GERMANIUM BEHAVIOR DURING THE LOW-TEMPERATURE PLASMA-ASSISTED OXIDATION OF SIGE ALLOYS

被引：2

作者：

TETELIN, C ^{[1
]}

WALLART, X ^{[1
]}

NYS, JP ^{[1
]}

VESCAN, L ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST SCHICHT & IONENTECH, D-52425 JULICH, GERMANY

来源：

SURFACE AND INTERFACE ANALYSIS | 1995年 / 23卷 / 06期

关键词：

D O I：

10.1002/sia.740230604

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, we investigate the germanium behaviour during the low-temperature plasma-assisted oxidation of strained epitaxial Si1-xGex (x = 0.1, 0.2) layers. For an oxidation temperature of 500 degrees C and an oxide thickness between 80 and 200 Angstrom, using Auger depth profiling, we find that the oxidation process leads to the formation of a pure SiO2 top layer and the rejection of Ge at the oxide/alloy interface. Taking into account in a suitable way the broadening effect affecting the Auger profiles, we show that a pure Ge layer is formed at the interface.

引用

页码：363 / 366

页数：4

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