TIME-RESOLVED PHOTOLUMINESCENCE STUDIES OF BIEXCITONS IN INP

被引:4
作者
CHARBONNEAU, S
ALLARD, LB
ROTH, AP
RAO, TS
机构
[1] Institute for Microstructural Sciences, National Research Council, Ottawa
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 20期
关键词
D O I
10.1103/PhysRevB.47.13918
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The low-temperature (5 K), steady-state photoluminescence spectra of a high-quality InP sample grown by chemical-beam epitaxy, reveal a new emission band at high excitation intensities. This emission is characterized by a superlinear intensity dependence on excitation density, a lifetime shorter than that of the polariton, and an energy between those of the donor-bound exciton and the free-exciton-polariton emissions. This suggests that it is due to the biexciton recombination transition. The origin of this new emission line is confirmed by the study of time-dependent photoluminescence spectra under high excitation intensity. The time-resolved spectra show the shift of the polariton and biexciton peaks to lower and higher energy, respectively, with increasing time delay after the laser excitation pulses. The high-energy shift of this new peak is characteristic of biexciton luminescence in direct-gap semiconductors.
引用
收藏
页码:13918 / 13921
页数:4
相关论文
共 12 条
[1]  
AKIMOTO O, 1969, SOLID STATE COMMUN, V10, P253
[2]   EXCITONIC MOLECULE [J].
BRINKMAN, WF ;
RICE, TM ;
BELL, B .
PHYSICAL REVIEW B, 1973, 8 (04) :1570-1580
[3]   2-DIMENSIONAL TIME-RESOLVED IMAGING WITH 100-PS RESOLUTION USING A RESISTIVE ANODE PHOTOMULTIPLIER TUBE [J].
CHARBONNEAU, S ;
ALLARD, LB ;
YOUNG, JF ;
DYCK, G ;
KYLE, BJ .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (11) :5315-5319
[4]  
Cho K., 1973, Optics Communications, V8, P412, DOI 10.1016/0030-4018(73)90231-9
[5]  
DEAN PJ, 1979, TOPICS CURRENT PHYSI, V14
[6]   THERMODYNAMICS OF EXCITONIC MOLECULES IN SILICON [J].
GOURLEY, PL ;
WOLFE, JP .
PHYSICAL REVIEW B, 1979, 20 (08) :3319-3327
[7]   MOBILE AND IMMOBILE EFFECTIVE-MASS-PARTICLE COMPLEXES IN NONMETALLIC SOLIDS [J].
LAMPERT, MA .
PHYSICAL REVIEW LETTERS, 1958, 1 (12) :450-453
[8]  
NIKITINE S, 1975, EXCITONS HIHG DENSIT
[9]   3.1X10(5)CM(2)/V(S) PEAK ELECTRON MOBILITIES IN INP GROWN BY CHEMICAL BEAM EPITAXY [J].
RAO, TS ;
LACELLE, C ;
ROTH, AP .
ELECTRONICS LETTERS, 1993, 29 (04) :373-375
[10]   ANISOTROPIC EXCITONIC MOLECULES IN CDS AND CDSE [J].
SHIONOYA, S ;
SAITO, H ;
HANAMURA, E ;
AKIMOTO, O .
SOLID STATE COMMUNICATIONS, 1973, 12 (03) :223-226