MODULATION-DOPED ALGAAS GAAS HETEROSTRUCTURE CHARGE COUPLED DEVICES

被引：12
作者：
MILANO, RA
COHEN, MJ
MILLER, DL
机构：
来源：
ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 08期
关键词：
D O I：
10.1109/EDL.1982.25548
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：194 / 196
页数：3
相关论文
共 11 条
[1]   CHARACTERIZATION OF CHARGE-TRANSFER DEVICES WITH POSITION-DEPENDENT SMALL-SIGNAL TRANSFER INEFFICIENCY [J].
BARSAN, RM .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1980, 48 (02) :149-164
[2]   SINGLE-INTERFACE ENHANCED MOBILITY STRUCTURES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
COLEMAN, JJ ;
DAPKUS, PD ;
YANG, JJJ .
ELECTRONICS LETTERS, 1981, 17 (17) :606-608
[3]  
DEYHIMEY I, 1981, ELEC DEV LETT, V2
[4]  
DEYHIMY I, 1980, JPN J APPL PHYS, V19, P269, DOI 10.7567/JJAPS.19S1.269
[5]   EXPERIMENTAL AND THEORETICAL ELECTRON-MOBILITY OF MODULATION DOPED ALXGA1-XAS-GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].
DRUMMOND, TJ ;
MORKOC, H ;
HESS, K ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5231-5234
[6]   DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J].
DRUMMOND, TJ ;
MORKOC, H ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1380-1386
[7]   EXTREMELY HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES GROWN BY MBE [J].
HIYAMIZU, S ;
MIMURA, T ;
FUJII, T ;
NANBU, K ;
HASHIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :L245-L248
[8]  
KOSONOCKY WF, 1975, RCA REV, V36, P566
[9]  
LIU YM, COMMUNICATION
[10]   ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J].
MIMURA, T ;
HIYAMIZU, S ;
JOSHIN, K ;
HIKOSAKA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :L317-L319
12