CHANGE OF THRESHOLD CURRENT OF INGAASP-HETEROLASERS (LAMBDA=1.55-MU-M) OWING TO AGING AND IRRADIATION

被引：0

作者：

ANDREEVA, RI

KOCHETKOV, AA

NIKOLAEV, VN

机构：

来源：

KVANTOVAYA ELEKTRONIKA | 1993年 / 20卷 / 01期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Degradation of cw InGaAsP-heterolasers (lambda = 1.55 mum) owing to aging and g-irradiation has been studied. A parameter, which is an indicator of the kinetics of the two processes, has been determined.

引用

页码：45 / 46

页数：2

共 50 条

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