CONTROL OF MODE BEHAVIOR IN SEMICONDUCTOR-LASERS

被引：31

作者：

WANG, S

CHEN, CY

LIAO, ASH

FIGUEROA, L

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[3] BELL TEL LABS INC,HOLMDEL,NJ 07733

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 04期

关键词：

D O I：

10.1109/JQE.1981.1071139

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：453 / 468

页数：16

相关论文

共 53 条

[1] TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE
AIKI, K
NAKAMURA, M
KURODA, T
UMEDA, J
ITO, R
CHINONE, N
MAEDA, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) : 89 - 94
[2] CHANNELED-SUBSTRATE PLANAR STRUCTURE (ALGA)AS INJECTION-LASERS
AIKI, K
NAKAMURA, M
KURODA, T
UMEDA, J
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 649 - 651
[3] ALFEROV ZI, 1970, SOV PHYS SEMICOND, V3, P1107
[4] ALFEROV ZI, 1963, Patent No. 181739
[5] [Anonymous], 1977, SEMICONDUCTOR LASERS
[6] [Anonymous], 1978, HETEROSTRUCTURE LASE
[7] LATERAL-MODE BEHAVIOR IN NARROW STRIPE LASERS
ASBECK, PM
CAMMACK, DA
DANIELE, JJ
KLEBANOFF, V
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 727 - 733
[8] CW HIGH-POWER SINGLE-MODE OPERATION OF CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS LASERS WITH A LARGE OPTICAL CAVITY
BOTEZ, D
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (03) : 190 - 192
[9] NONPLANAR LARGE OPTICAL CAVITY GAAS-GAALAS SEMICONDUCTOR-LASER
BURNHAM, RD
SCIFRES, DR
STREIFER, W
PELED, S
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (10) : 734 - 736
[10] CASEY HC, 1978, HETEROSTRUCTURE LA A, P164

← 1 2 3 4 5 6 →