LATTICE STRAIN AND MISFIT DISLOCATION IN GAAS-GAALASP HETEROJUNCTION

被引：5

作者：

NISHIZAWA, J

OKUNO, Y

FUKASE, M

TADANO, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 52卷 / APR期

关键词：

D O I：

10.1016/0022-0248(81)90400-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：929 / 935

页数：7

共 11 条

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[7] PERFECT CRYSTAL-GROWTH OF SILICON BY VAPOR-DEPOSITION [J].

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[9] MISFIT DISLOCATIONS IN BICRYSTALS OF EPITAXIALLY GROWN SILICON ON BORON-DOPED SILICON SUBSTRATES [J].

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