BINDING-ENERGY OF THE BOUND POLARON IN A QUANTUM-WELL WITHIN AN ELECTRIC-FIELD

被引：20

作者：

CHEN, CY ^{[1
]}

JIN, PW ^{[1
]}

ZHANG, SQ ^{[1
]}

机构：

[1] GUANGZHOU TEACHERS COLL,DEPT PHYS,CANTON 510400,PEOPLES R CHINA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1992年 / 4卷 / 18期

关键词：

D O I：

10.1088/0953-8984/4/18/014

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The method of a variational wavefunction has been used to study the effect of the electron-LO-phonon interaction on the binding energy of the ground bound state of an isolated hydrogenic impurity in a GaAs-Ga1-xAlxAs quantum well subjected to an external electric field. The binding energy is obtained as a function of the impurity position z(i), the well width L and the electric field strength F. It was found that the polaronic correction to the impurity binding energy is quite significant. The correction ranges from about 8% when the impurity is placed at the centre to 13-15% when the impurity is placed at the boundary for the thin quantum well.

引用

页码：4483 / 4489

页数：7

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