VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS, GA1-XALXAS AND RELATED-COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY

被引：33

作者：

KIRCHNER, PD ^{[1
]}

WOODALL, JM ^{[1
]}

FREEOUF, JL ^{[1
]}

PETTIT, GD ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 06期

关键词：

D O I：

10.1063/1.92384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：427 / 429

页数：3

共 10 条

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[7]

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[8] GROWTH TEMPERATURE-DEPENDENCE IN MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE [J].

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[9] GROWTH-PARAMETER DEPENDENCE OF DEEP LEVELS IN MOLECULAR-BEAM-EPITAXIAL GAAS [J].

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[10]

WICKS GW, UNPUBLISHED

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